Research Disclosure no longer supports Internet Explorer

1 SYSTEMS, METHODS, AND DEVICES FOR THERMAL CONDITIONING OF RETICLES IN LITHOGRAPHIC APPARATUSES FIELD 5 [0001] The present disclosure relates to systems, methods, and devices for thermal conditioning and reticle cooling in lithographic apparatuses. BACKGROUND [0002] A lithographic apparatus is a machine that applies a desired pattern onto a 10 substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, can be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g., comprising part of, one, or several dies) on a substrate (e.g., a silicon 15 wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion 20 is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning”-direction) while synchronously scanning the target portions parallel or anti-parallel to this scanning direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate. [0003] To project a pattern on a substrate a lithographic apparatus may use 25 electromagnetic radiation. The wavelength of this radiation determines the minimum size of features which can be formed on the substrate. A lithographic apparatus may use extreme ultraviolet (EUV) radiation, having a wavelength within the range 4-20 nm, for example 6.7 nm or 13.5 nm, or deep ultraviolet (DUV) radiation, having a wavelength in the range of about 120 to about 400 nm, for example 193 or 248 nm. 30 [0004] In DUV lithography, the radiation beam may cause thermal responses in the reticle. In particular, the reticle may absorb a large amount of thermal energy from the DUV radiation beam, which can cause the reticle to heat up and expand. Other sources, such as various mechatronic devices throughout the reticle handler and reticle stage modules, can contribute to reticle heating as well. Reticle heating, which results in a non-uniform thermal 2 profile of the reticle, may serve as a major contribution to image distortion and overlay errors in the lithography system. Thus, reticle cooling methods can be utilized to prevent deformation and overlay issues. In some cases, thermal conditioning systems that utilize customized nozzles and gas outlets may be implemented in patterning apparatuses for providing a gas flow near to 5 the surface of a reticle and support structure for reticle cooling. However, such systems and methods for cooling and controlling reticle temperatures may necessitate customized parts and additional hardware that result high costs and increased system complexity. SUMMARY 10 [0005] Accordingly, there may be a need for low cost solutions with reduced complexities for reticle cooling and thermal conditioning in DUV lithography. Thus, the present disclosure provides systems, methods, and devices for thermal conditioning of reticles at a patterning device handling apparatus and a support structure in lithographic apparatuses. [0006] In some embodiments, a patterning device cooling system for thermally 15 conditioning a patterning device of a lithographic apparatus is described. The cooling system includes a thermal conditioner configured to thermally condition the patterning device. The cooling system also includes a controller that controls the thermal conditioner to determine a temperature state of the patterning device, determine a production state of the lithographic apparatus, and thermally condition the patterning device for exposures based on the 20 temperature state and the production state. [0007] In some embodiments, a method for thermally conditioning a patterning device of a lithographic apparatus is described. The method includes determining a temperature state of a patterning device, determining a production state of the lithographic apparatus, and thermally conditioning, by a conditioning device, the patterning device for exposures based on 25 the temperature state and the production state. [0008] Further features of the disclosure, as well as the structure and operation of various embodiments of the disclosure, are described in detail below with reference to the accompanying drawings. It is noted that the disclosure is not limited to the specific embodiments described herein. Such embodiments are presented herein for illustrative 30 purposes only. Additional embodiments will be apparent to persons skilled in the relevant art(s) based on the teachings contained herein. 3 BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES [0009] The accompanying drawings, which are incorporated herein and form part of the specification, illustrate the present disclosure and, together with the description, further serve to explain the principles of the disclosure and to enable a person skilled in the relevant 5 art(s) to make and use the disclosure. [0010] FIG. 1A is a schematic illustration of a reflective lithographic apparatus, according to embodiments of the present disclosure. [0011] FIG. 1B is a schematic illustration of a transmissive lithographic apparatus, according to embodiments of the present disclosure. 10 [0012] FIG. 2 depicts a perspective view of a patterning device support and a gripping device of a patterning device handling apparatus coupled with a patterning device, according to embodiment...