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1 METHOD FIELD [0001] The embodiments provided herein generally relate to charged particle apparatuses and 5 methods for projecting a multi-beam of charged particles toward a sample. BACKGROUND [0002] When manufacturing semiconductor integrated circuit (IC) chips, undesired pattern defects, as a consequence of, for example, optical effects and incidental particles, inevitably occur on a 10 substrate (i.e. wafer) or a mask during the fabrication processes, thereby reducing the yield. Monitoring the extent of the undesired pattern defects is therefore an important process in the manufacture of IC chips. More generally, the inspection and/or measurement of a surface of a substrate, or other object/material, is an important process during and/or after its manufacture. [0003] Pattern inspection tools with a charged particle beam have been used to inspect objects, for 15 example to detect pattern defects. These tools typically use electron microscopy techniques, such as a scanning electron microscope (SEM). In a SEM, a primary electron beam of electrons at a relatively high energy is targeted with a final deceleration step in order to land on a sample at a relatively low landing energy. The beam of electrons is focused as a probing spot on the sample. The interactions between the material structure at the probing spot and the landing electrons from the beam of 20 electrons cause electrons to be emitted from the surface, such as secondary electrons, backscattered electrons or Auger electrons. The generated secondary electrons may be emitted from the material structure of the sample. By scanning the primary electron beam as the probing spot over the sample surface, secondary electrons can be emitted across the surface of the sample. By collecting these emitted secondary electrons from the sample surface, a pattern inspection tool may obtain an image 25 representing characteristics of the material structure of the surface of the sample. The intensity of the electron beams comprising the backscattered electrons and the secondary electrons may vary based on the properties of the internal and external structures of the sample, and thereby may indicate whether the sample has defects. [0004] The relatively high energy beam of electrons may be emitted from a source cathode. The 30 final deceleration step may be achieved by biasing the sample to a high voltage close to that of the source cathode. The sample holder may be maintained at high voltage so as to bias the sample. This can make the design of any moving stage complicated. There is also a risk of damage to the sample and components of the tool through electric discharge, for which the risk may be greater between relatively moving components such as the holder and a stage which moves the sample and the holder. 35 SUMMARY Confidential 2 [0005] It is an object of the present disclosure to provide embodiments that support beams of charged particles landing on a sample at low landing energy while reducing the complexity of any moving stage and reducing the risk of damaging the sample. 5 BRIEF DESCRIPTION OF FIGURES [0006] The above and other aspects of the present disclosure will become more apparent from the description of exemplary embodiments, taken in conjunction with the accompanying drawings. [0007] FIG. 1 is a schematic diagram illustrating an exemplary electron beam inspection apparatus. [0008] FIG. 2 is a schematic diagram illustrating an exemplary electron multi-beam apparatus that is 10 part of the exemplary electron beam inspection apparatus of FIG. 1. [0009] FIG. 3 is a schematic diagram of an exemplary multi-beam electron apparatus. [0010] FIG. 4 is a schematic diagram of an exemplary electron apparatus comprising a macro collimator and macro scan deflector. [0011] FIG. 5 is a schematic diagram of an exemplary multi-beam electron apparatus according to an 15 embodiment. [0012] FIG. 6 is a schematic diagram of part of the multi-beam electron apparatus of FIG. 5. [0013] FIG. 7 is a schematic cross-sectional view of an objective lens array of an electron apparatus according to an embodiment. [0014] FIG. 8 is a schematic cross-sectional view of a control lens array and an objective lens array 20 of an electron apparatus according to an embodiment. [0015] FIG. 9 is a bottom view of a modification of the objective lens array of FIG. 7 or FIG. 8. [0016] FIG. 10 is an enlarged schematic cross-sectional view of a detector incorporated in the objective lens array of FIG. 7 or FIG. 8. [0017] FIG. 11 is a bottom view of a detector element of a detector. 25 [0018] FIG. 12 is a schematic diagram of the exemplary electron apparatus according to an embodiment. [0019] FIG. 13 is a schematic diagram of the exemplary electron apparatus according to an embodiment. [0020] FIG. 14 is a schematic diagram of the exemplary electron apparatus according to an 30 embodiment. [0021] FIG. 15 is a schematic diagram of the exemplary electron apparatus according to an embodiment. [0022] FIG. 16 is a schematic diagram of the exemplary electron apparatus according to an embodiment. 35 [0023] The schematic diagrams and views show the components described below. However, the components depicted in the figures are not to scale. Confidential 3 DETAILED DESCRIPTION [0024] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings in which the same numbers in different drawings represent the same or similar elements 5 unless otherwise represented. The implementations set forth in the following description of exemplary embodiments do not represent all implementations consistent with the invention. Instead, they are merely examples of apparatuses and methods consistent with aspects related to the invention disclosed herein. [0025] The enhanced computing power of electronic devices, which reduces the physical size of the 10 devices, can be accomplished by significantly increasing the packing density of circuit components such as transistors, capacitors, diodes, etc. on an IC chip. This has been enabled by increased resolution enabling yet smaller structures to be made. For example, an IC chip of a smart phone, which is the size of a thumbnail and available in, or earlier than, 2019, may include over 2 billion transistors, the size of each transistor being less than 1/1000th of a human hair. Thus, it is not 15 surprising that semiconductor IC manufacturing is a complex and time-consuming process, with hundreds of individual steps. Errors in even one step have the potential to dramatically affect the functioning of the final product. Just one “killer defect” can cause device failure. The goal of the manufacturing process is to improve the overall yield of the process. For example, to obtain a 75% yield for a 50-step process (where a step can indicate the number of layers formed on a wafer), each 20 individual step must have a yield greater than 99.4%,. If each individual step had a yield of 95%, the overall process yield would be as low as 7%. [0026] While high process yield is desirable in an IC chip manufacturing facility, maintaining a high substrate (i.e. wafer) throughput, defined as the number of substrates processed per hour, is also essential. High process yield and high substrate throughput can be impacted by the presence of a 25 defect. This is especially true if operator intervention is required for reviewing the defects. Thus, high throughput detection and identification of micro and nano-scale defects by inspection tools (such as a Scanning Electron Microscope (‘SEM’)) is essential for maintaining high yield and low cost. [0027] A SEM comprises a scanning device and a detector apparatus. The scanning device comprises an illumination apparatus that comprises an electron source, for generating primary 30 electrons, and a projection apparatus for scanning a sample, such as a substrate, with one or more focused beams of primary electrons. Together at least the illumination apparatus, or illumination system, and the projection apparatus, or projection system, may be referred to together as the electron- optical system or apparatus. The primary electrons interact with the sample and generate signal electrons such as secondary electrons. The detection apparatus captures the signal electrons from the 35 sample as the sample is scanned so that the SEM can create an image of the scanned area of the sample. For high throughput inspection, some of the inspection apparatuses use multiple focused beams, i.e. a multi-beam, of primary electrons. The component beams of the multi-beam may be Confidential 4 referred to as sub-beams or beamlets. A multi-beam can scan different parts of a sample simultaneously. A multi-beam inspection apparatus can therefore inspect a sample at a much higher speed than a single-beam inspection apparatus. [0028] An implementation of a known multi-beam inspection apparatus is described below. 5 [0029] Within the following description of drawings the same or like reference numbers refer to the same or like components or entities, and only the differences with respect to the individual embodiments are described. While the description and drawings are directed to an electron-optical system, it is appreciated that the embodiments are not used to limit the present disclosure to specific charged particles. References to electrons throughout the present document may therefore be more 10 generally considered to be references to charged particles, with the charged particles not necessarily being electrons. For example, reference to an electron apparatus may be more generally considered to be reference to a charged particle apparatus. [0030] Reference is now made to FIG. 1, which is a schematic diagram illustrating an exemplary electron beam inspection apparatus 100. The electron beam inspection apparatus 100 of FIG. 1 15 includes a main chamber 10, a load lock chamber 20, an electron apparatus 40 (which may also be called an electron assessment apparatus or an electron beam system or tool), an equipment front end module (EFEM) 30 and a controller 50. The electron apparatus 40 is located within the main chamber 10. [0031] The EFEM 30 includes a first loading port 30a and a second loading port 30b. The EFEM 30 20 may include additional loading port(s). The first loading port 30a and the second loading port 30b may, for example, receive substrate front opening unified pods (FOUPs) that contain substrates (e.g., semiconductor substrates or substrates made of other material(s)) or samples to be inspected (substrates, wafers and samples are collectively referred to as “samples” hereafter). One or more robot arms (not shown) in the EFEM 30 transport the samples to the load lock chamber 20. 25 [0032] The load lock chamber 20 is used to remove the gas around a sample. This creates a vacuum that is a local gas pressure lower than the pressure in the surrounding environment. The load lock chamber 20 may be connected to a load lock vacuum pump system (not shown), which removes gas particles in the load lock chamber 20. The operation of the load lock vacuum pump system enables the load lock chamber to reach a first pressure below the atmospheric pressure. After reaching the 30 first pressure, one or more robot arms (not shown) transport the sample from the load lock chamber 20 to the main chamber 10. The main chamber 10 is connected to a main chamber vacuum pump system (not shown). The main chamber vacuum pump system removes gas particles in the main chamber 10 so that the pressure in around the sample reaches a second pressure lower than the first pressure. After reaching the second pressure, the sample is transported to the electron apparatus 40 by 35 which it may be inspected. The electron apparatus 40 comprises an electron-optical device 41. The electron-optical device 41 may be an electron-optical column configured to project at least one electron beam towards the sample 208, and/or an objective lens module configured to focus at least Confidential 5 one electron beam onto the sample 208. The electron-optical device may also comprise a detector module configured to detect electrons emitted from the sample 208, and/or a control lens module configured to adjust an electron-optical parameter of at least one electron beam. In an embodiment the electron-optical column may comprise the objective lens module and the detector module and 5 optionally the control lens module. In an embodiment the electron-optical device comprises an objective lens assembly which may be comprised in the electron-optical column. The objective lens assembly comprises an objective lens array associated with (e.g. integrated with) one or more other electron-optical components such as a detector array and optionally a control lens array. The electron-optical device 41 may be a multi-beam electron-optical device 41 for a multi-beam projected 10 towards the sample 208. [0033] The controller 50 is electronically connected to electron-optical components of the electron- optical device 41 of the electron apparatus 40. The controller 50 may be a processor (such as a computer) configured to control the electron beam inspection apparatus 100. The controller 50 may also include a processing circuitry configured to execute various signal and image processing 15 functions. While the controller 50 is shown in FIG. 1 as being outside of the structure that includes the main chamber 10, the load lock chamber 20, and the EFEM 30, it is appreciated that the controller 50 may be part of the structure. The controller 50 may be located in one of the component elements of the electron beam inspection apparatus 100 or it can be distributed over at least two of the component elements. The controller may be considered to be part of the electron-optical device 41. 20 While the present disclosure provides examples of the main chamber 10 housing an electron beam inspection tool, it should be noted that aspects of the disclosure in their broadest sense are not limited to a chamber housing an electron beam inspection tool. Rather, it is appreciated that the foregoing principles may also be applied to other tools and other arrangements of apparatus, that operate under the second pressure. 25 [0034] Reference is now made to FIG. 2, which is a schematic diagram illustrating an exemplary electron apparatus 40 including a multi-beam electron-optical device 41 that is part of the exemplary electron beam inspection apparatus 100 of FIG. 1. The electron apparatus 40 comprises an electron source 201 and a projection apparatus 230. The electron apparatus 40 further comprises a motorize...