# RD 712081
SYSTEM AND METHOD FOR SUBSTRATE EDGE EXPOSING, AND LITHOGRAPHIC APPARATUS INCLUDING THE SYSTEM
Publication date
17/07/2023
Language
English
Paper publication
August 2023 Research Disclosure journal
Digital time stamp
4890e395150f6e2cffd263a83b3cf2c26b0922b1223db14f0f752e00b1b33301
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19 pages(s) - 254K
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Abstract

1 SYSTEM AND METHOD FOR SUBSTRATE EDGE EXPOSING, AND LITHOGRAPHIC APPARATUS INCLUDING THE SYSTEM FIELD [0001] The present invention relates to a system and method for exposing a substrate edge. Wafer Edge Exposure (WEE) is a common step in high-volume semiconductor manufacturing. The high-intensity WEE increases the yield of semiconductor devices from the wafer. BACKGROUND [0002] A lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithographic apparatus may, for example, project a pattern (also often referred to as “design layout” or “design”) of a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) provided on a substrate (e.g., a wafer). [0003] As semiconductor manufacturing processes continue to advance, the dimensions of circuit elements have continually been reduced while the amount of functional elements, such as transistors, per device has been steadily increasing over decades, following a trend commonly referred to as ‘Moore’s law’. To keep up with Moore’s law the semiconductor industry is chasing technologies that enable to create increasingly smaller features. To project a pattern on a substrate a lithographic apparatus may use electromagnetic radiation. The wavelength of this radiation determines the minimum size of features which are patterned on the substrate. Typical wavelengths currently in use are 365 nm (i-line), 248 nm, 193 nm and 13.5 nm. A lithographic apparatus, which uses extreme ultraviolet (EUV) radiation, having a wavelength within a range of 4 nm to 20 nm, for example 6.7 nm or 13.5 nm, may be used to form smaller features on a substrate than a lithographic apparatus which uses, for example, radiation with a wavelength of 193 nm. [0004] Wafer edge exposure (WEE) may be included in the lithographic process, for instance for plating processes. Wafer edge exposure may be used in, for instance, applications such as advanced packaging. Depending on the resist type (positive or negative), edge exposure may include steps to expose one or two rings at the edge of the substrate. [0005] The ring around the substrate can, conventionally, not be made with a regular exposure step in a stepper or scanner. There are multiple ways to do so, for instance using an offline tool, in a track (for instance a tool provided by TEL [Tokyo Electron Limited]). 2 Canon® [JP] markets a system wherein the ring can be exposed in the scanner. The exposure step may be combined with temperature stabilization, wherein the substrate is included in an offline tool, and put on a so-called Temperature Stabilization Unit (TSU). [0006] In high-volume semiconductor manufacturing, WEE is typically performed after exposure in a lithography device. WEE is available as an off-line tool or as a track add on. There are in-line options in which the wafer pre-align module can perform a wafer edge exposure function. An integrated solution is needed to reduce processing steps and processing stations and to foster development in advanced packaging machines, in particular for low-end applications. [0007] KR-20060132244-A discloses an exposure method including an exposure of a wafer edge and an exposure apparatus using the same are provided to expose the wafer edge on a center table by using a waiting time. A wafer including photoresist is loaded on a center table of a pre-aligner of an exposure apparatus in order to pre-align the wafer. An exposure process is performed to expose a wafer edge by collecting light from a lighting part including a light source and a light transmitting unit of the exposure appara...